Trench-based silicon carbide power MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors) represent a dramatic improvement in the Figure of Merit (FOM) values of power conversion switching ...
The marking must comply with Sec. 110.21(B)(3). Note: Sec. 210.8 specifies requirements for GFCI protection for the receptacle outlets where the location warrants such protection. In addition, the ...
Researchers at the King Abdullah University of Science and Technology (KAUST) in Saudi Arabia have investigated whether the temperature coefficient of the short circuit current in perovskite-silicon ...
GOLETA, Calif.--(BUSINESS WIRE)--Transphorm, Inc. (Nasdaq: TGAN), a global leader in GaN power semiconductors, the future of next generation power systems, today announced it has demonstrated up to 5 ...